Nanoscale Memory Repair [electronic resource] / by Masashi Horiguchi, Kiyoo Itoh.
Tipo de material: TextoSeries Integrated Circuits and Systems; Descripción: X, 218 p. online resourceTipo de contenido: text Tipo de medio: computer Tipo de portador: online resource ISBN: 9781441979582 99781441979582Tema(s): Engineering | Computer aided design | Systems engineering | Engineering | Circuits and Systems | Computer-Aided Engineering (CAD, CAE) and DesignClasificación CDD: 621.3815 Clasificación LoC:TK7888.4Recursos en línea: ir a documentoTipo de ítem | Ubicación actual | Colección | Signatura | Info Vol | Copia número | Estado | Fecha de vencimiento | Código de barras | Reserva de ítems |
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DOCUMENTOS DIGITALES | Biblioteca Jorge Álvarez Lleras | Digital | 621.3815 223 (Navegar estantería) | Ej. 1 | 1 | Disponible | D000569 |
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621.3815 223 Advanced Materials for Thermal Management of Electronic Packaging | 621.3815 223 Power Distribution Networks with On-Chip Decoupling Capacitors | 621.3815 223 Application-Specific Mesh-based Heterogeneous FPGA Architectures | 621.3815 223 Nanoscale Memory Repair | 621.3815 223 Post-Silicon and Runtime Verification for Modern Processors | 621.3815 223 Multiprocessor Systems on Chip | 621.3815 223 Application Analysis Tools for ASIP Design |
An Introduction to Repair Techniques: Basics of Redundancy -- Basics of Error Checking and Correction -- Comparison between Redundancy and ECC -- Repairs of Logic Circuits -- Redundancy: Models of Fault Distribution -- Yield Improvement through Redundancy -- Replacement Schemes -- Intra-Subarray Replacement -- Inter-Subarray Replacement -- Subarray Replacement -- Devices for Storing Addresses -- Testing for Redundancy -- Error Checking and Correction: Linear Algebra and Linear Codes -- Galois Field -- Error-Correcting Codes -- Coding and Decoding Circuits -- Theoretical Reduction in Soft-Error and Hard-Error Rates -- Application of ECC -- Testing for ECC -- Synergistic Effect of Redundancy and ECC: Repair of Bit Faults using Synergistic Effect -- Application of Synergistic Effect.
Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. As a result, repair techniques have been indispensable for nano-scale memories. Without these techniques, even modern MPUs SoCs, in which memories have dominated the area and performance, could not have been designed successfully. This book systematically describes these yield and reliability issues in terms of mathematics and engineering, as well as an array of repair techniques, based on the authors'long careers in developing memories and low-voltage CMOS circuits. Nanoscale Memory Repair gives a detailed explanation of the various yield models and calculations, as well as various, practical logic and circuits that are critical for higher yield and reliability. Presents the first comprehensive reference to reliability and repair techniques for nano-scale memories; Covers both the mathematical foundations and engineering applications of yield and reliability in nano-scale memories; Includes a variety of practical circuits and logic, critical for higher yield and reliability, which have been proven successful during the authors'extensive experience in developing memories and low-voltage CMOS circuits.
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