Strain-Induced Effects in Advanced MOSFETs [electronic resource] / by Viktor Sverdlov.
Tipo de material: TextoSeries Computational Microelectronics; Descripción: XIV, 252p. 101 illus. online resourceISBN: 9783709103821 99783709103821Tema(s): Engineering | Engineering | ELECTRONICS AND MICROELECTRONICS, INDTRUMENTATION | ELECTRONICSClasificación CDD: 621.381 Recursos en línea: ir a documento Resumen: Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is givenTipo de ítem | Ubicación actual | Colección | Signatura | Info Vol | Copia número | Estado | Fecha de vencimiento | Código de barras | Reserva de ítems |
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DOCUMENTOS DIGITALES | Biblioteca Jorge Álvarez Lleras | Digital | 621.381 223 (Navegar estantería) | Ej. 1 | 1 | Disponible | D000719 |
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Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given
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