Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets [electronic resource] / by Laurent Leyssenne, Eric Kerhervé, Yann Deval.
Contributor(s): Kerhervé, Eric | [author.] | Deval, Yann | [author.] | SpringerLink (Online service)Material type: TextSeries: Analog Circuits and Signal ProcessingDescription: XVI, 168 p. online resourceISBN: 9789400704251 99789400704251Subject(s): Engineering | Engineering | MICROWAVES | MICROWAVES, RF AND OPTICAL ENGINEERING | ELECTRONICS AND MICROELECTRONICS, INDTRUMENTATION | CIRCUITS AND SYSTEMS | ELECTRONICS | SYSTEMS ENGINEERING | SPECIAL PURPOSE AND APPLICATION BASED SYSTEMS | SOFTWARE ENGINEERINGDDC classification: 621.3 Online resources: ir a documento
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|DOCUMENTOS DIGITALES||Biblioteca Jorge Álvarez Lleras||Digital||621.3 223 (Browse shelf)||Ej. 1||1||Available||D000646|
Preface -- Acknowledgments -- Abbreviations -- Chapter 1 Mobile Phone Transmitters for Wireless Standards: systems, architectures and technologies -- Chapter 2 Discretized Reconfiguration Techniques for Radiofrequency Power Amplifiers -- Chapter 3 Continuous Adaptive Bias Technique for Radiofrequency Power amplifiers -- General Conclusion -- Appendices -- Index.
Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets is intended to designers and researchers who have to tackle the efficiency/linearity trade-off in modern RF transmitters so as to extend their battery lifetime. High data rate 3G/4G standards feature broad channel bandwidths, high dynamic range and critical envelope variations which generally forces the power amplifier (PA) to operate in a low efficiency "backed-off" regime. Classic efficiency enhancement techniques such as Envelope Elimination and Restoration reveal to be little compliant with handset-dedicated PA implementation due to their channel-bandwidth-limited behavior and their increased die area consumption and/or bill-of-material. The architectural advances that are proposed in this book circumvent these issues since they put the stress on low die-area low power-consumption control circuitry. The advantages of silicon over III/V technologies are highlighted by several analogue signal processing techniques that can be implemented on-chip with a power amplifier. System-level and transistor-level simulations are combined to illustrate the principles of the proposed power adaptive solutions. Measurement on BICMOS demonstrators allows validating the functionality of dynamic linearity/efficiency management. In Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets, PA designers will find a review of technologies, architectures and theoretical formalisms (Volterra series)