Low Power and Reliable SRAM Memory Cell and Array Design [electronic resource] / edited by Koichiro Ishibashi, Kenichi Osada.
Tipo de material:
TextoSeries Springer Series in Advanced Microelectronics | ; -31Descripción: XI, 143p. 141 illus., 15 illus. in color. online resourceISBN: - 9783642195686 99783642195686
- 621.381 223
Contenidos:
Resumen: Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
Preface -- Introduction -- Fundamentals of SRAM Memory Cell -- Electrical Stability -- Sensitivity Analysis -- Memory Cell Design Technique for Low Power SOC -- Array Design Techniques -- Dummy Cell Design -- Reliable Memory Cell Design -- Future Technologies.
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DOCUMENTOS DIGITALES
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Biblioteca Jorge Álvarez Lleras | Digital | 621.381 223 (Navegar estantería(Abre debajo)) | Ej. 1 | 1 | Disponible | D000499 |
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Preface -- Introduction -- Fundamentals of SRAM Memory Cell -- Electrical Stability -- Sensitivity Analysis -- Memory Cell Design Technique for Low Power SOC -- Array Design Techniques -- Dummy Cell Design -- Reliable Memory Cell Design -- Future Technologies.
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
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