000			01756nam a2200301za04500
001			17584
008			050703s2011 gw eng d
020			_a9783642195686 99783642195686
082			_a621.381 _b223
245			_aLow Power and Reliable SRAM Memory Cell and Array Design _h[electronic resource] / _cedited by Koichiro Ishibashi, Kenichi Osada.
300			_aXI, 143p. 141 illus., 15 illus. in color. _bonline resource.
490			_aSpringer Series in Advanced Microelectronics
490			_x-1437-0387 ; _v-31
505			_aPreface -- Introduction -- Fundamentals of SRAM Memory Cell -- Electrical Stability -- Sensitivity Analysis -- Memory Cell Design Technique for Low Power SOC -- Array Design Techniques -- Dummy Cell Design -- Reliable Memory Cell Design -- Future Technologies.
520			_aSuccess in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
650			_aEngineering. _996
650			_aEngineering. _996
650			_934416 _aENGINEERING, GENERAL
650			_933664 _aELECTRONICS AND MICROELECTRONICS, INDTRUMENTATION
650			_933659 _aELECTRONICS
700			_aIshibashi, Koichiro. _935160
700			_eeditor. _935161
700			_aOsada, Kenichi. _935162
700			_eeditor. _935161
710			_aSpringerLink (Online service) _9111
856			_uhttp://springer.escuelaing.metaproxy.org/book/10.1007/978-3-642-19568-6 _yir a documento _qURL
942			_2ddc _cCF
999			_c14209 _d14209